| PART |
Description |
Maker |
| 1SS269 |
Small packag Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6(Typ.)
|
TY Semiconductor Co., Ltd
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1606 |
2W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| TC1706 |
3 W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
| FLC317MG-4 |
HIGH VOLTAGE - HIGH POWER GAAS FET
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| FLL21E040IK |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E004ME |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| FLL1200IU- FLL1200IU-3 |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Eudyna Devices Inc
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
